AO3401A-EV

AO3401A-EV

$0.26
  • Description:MOSFET P-CH 30V 4A SOT23
  • Series:-
  • Mfr:EVVO
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e41f15199e28 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 4A SOT23
  • Series:-
  • Mfr:EVVO
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:50mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id:1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:954 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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AO3401A-EV

Overview

The AO3401A-EV is a P-Channel Enhancement Mode MOSFET manufactured by EVVO. It features a Drain-to-Source Voltage (VDS) of -30 V and a Continuous Drain Current (ID) of -4.2 A at 25°C ambient temperature. The device offers low on-resistance, specified as less than 50 ohms at VGS = -10 V and less than 65 ohms at VGS = -4.5 V. It utilizes a high cell density trenched technology for improved efficiency in small power switching applications.

Feature Summary

  • P-Channel Enhancement Mode MOSFET construction
  • High cell density trenched technology for excellent RDS(ON)
  • Surface Mount SOT-23 package configuration

Applications

  • Small power switching circuits
  • Load switch applications
  • Battery protection modules

Procurement Notes

Verify the manufacturer designation EVVO against the specific part marking. Confirm the SOT-23-3 package type matches the design footprint. Ensure the -30V rating and -4.2A current limits align with the system requirements. Check datasheet revisions for any parameter updates before finalizing procurement specifications.

Selection Notes

Select this component for low-side or high-side switching where a P-channel device is required. The -30V voltage rating suits standard 12V or 24V systems. Consider the thermal dissipation capabilities, rated at 1.4W Ta, for heat management. Verify gate drive voltages to ensure RDS(ON) remains within acceptable limits for the application.

Part Context

This component belongs to the single FETs and MOSFETs category. It is functionally similar to other industry-standard P-Channel MOSFETs like the AO3401A from Alpha & Omega Semiconductor, sharing identical electrical characteristics and pinout configurations for direct replacement in many designs.

Replacement Considerations

The AO3401A is a confirmed substitute part number with matching electrical specifications. Ensure the replacement maintains the SOT-23-3 package form factor. Verify that the substitute device meets the same -30V VDS and -4.2A ID ratings.

AO3401A-EVAO3401A-EV
$0.26
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