AO3409A

$0.38

Description：30V 2.6A 130MR@10V,2.6A 1.4W 3V@
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e9d5797042cd Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：30V 2.6A 130MR@10V,2.6A 1.4W 3V@
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：130mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3409A

Overview

The UMW AO3409A is a P-Channel Enhancement Mode Field Effect Transistor housed in an SOT-23 package. It features a drain-source breakdown voltage (VDS) of -30V and a continuous drain current (ID) of -2.6A at VGS = -10V. The device exhibits a maximum on-resistance (RDS(ON)) of less than 130mΩ at VGS = -10V and less than 200mΩ at VGS = -4.5V. Power dissipation is rated at 1.4W at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 125°C/W. The component operates within a junction and storage temperature range of -55°C to +150°C.

Feature Summary

Utilizes advanced trench technology to achieve excellent on-resistance and low gate charge characteristics.
Capable of functioning as a load switch or in pulse-width modulation (PWM) applications.
Designed for logic-level gate drive operation, supporting efficient switching at lower gate voltages.

Applications

Load switching circuits
Pulse-width modulation (PWM) control systems

Procurement Notes

Verify the specific manufacturer marking and ordering code against the datasheet to confirm authenticity. Ensure the package type matches the required SOT-23 footprint and pinout configuration. Check for RoHS compliance status if environmental regulations apply to the final assembly. Confirm that the thermal management design accommodates the specified junction-to-ambient resistance values under expected operating conditions.

Selection Notes

Select this component when a compact P-Channel MOSFET is required for low-voltage switching applications. Consider the -30V rating and -2.6A current capability relative to the circuit's peak loads. Evaluate the RDS(ON) specifications at the intended gate drive voltage to ensure acceptable conduction losses. Verify that the package size fits the available PCB real estate constraints.

Part Context

This part belongs to the AO3400 series of power MOSFETs manufactured by UMW. These devices are commonly used in portable electronics and battery-powered equipment due to their small form factor and efficiency. The AO3409A specifically addresses the need for P-Channel solutions in single-supply logic interfaces.