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The AO3413L is a P-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It features a -20V drain-source voltage and a continuous drain current of -3A at 25°C. The device utilizes trench technology to achieve a low on-resistance, typically 80mΩ at Vgs=-4.5V and Id=-3A, with a maximum of 97mΩ under the same conditions. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 1.4W at 25°C ambient temperature.
Verify the specific suffix 'L' against official Alpha & Omega Semiconductor documentation to confirm pinout or electrical parameter variations compared to the standard AO3413. Ensure the component source matches the manufacturer's active product list to avoid counterfeit parts. Confirm RoHS compliance status directly from the datasheet.
Select this component for applications requiring a compact SOT-23 package with moderate current handling capabilities. Consider the -20V voltage rating and -3A current limit when designing load circuits. Evaluate the thermal performance given the 1.4W power dissipation rating in your specific PCB layout environment.
This part belongs to the AO34xx series of small signal MOSFETs from Alpha & Omega Semiconductor. These devices are widely used in portable electronics and battery-powered applications due to their small footprint and efficient switching characteristics. The AO3413 specifically targets general-purpose switching needs in low-voltage systems.
Check for direct substitutes such as AO3401A or AO3415C if higher voltage or current ratings are required. Verify pin compatibility and electrical specifications before substituting.