AO3416

$0.43

Description：MOSFET N-CH 20V 6.5A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:33b7753ec562 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 6.5A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1160 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3416

Overview

The AO3416 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance, supporting operation with gate voltages as low as 1.8V. The device features a maximum continuous drain current of 6.5A at VGS=4.5V, with RDS(ON) values below 22mΩ at 4.5V, 26mΩ at 2.5V, and 34mΩ at 1.8V. Packaged in SOT-23, it includes ESD protection and is rated for junction temperatures up to 150°C.

Feature Summary

Advanced trench technology provides low gate charge and excellent on-resistance.
Capable of operation with gate voltages as low as 1.8V.
Integrated ESD protection for enhanced reliability.

Applications

Load switch applications
PWM (Pulse Width Modulation) control

Procurement Notes

Verify the specific manufacturer marking and datasheet revision against official Alpha & Omega Semiconductor documentation. Confirm that the component meets consumer market specifications, as critical life support applications are not authorized. Ensure thermal management aligns with the specified junction-to-ambient resistance values for your PCB layout.

Selection Notes

Select this component for low-voltage logic driving scenarios requiring high efficiency. The low RDS(ON) at 1.8V makes it suitable for battery-powered devices. Verify that the 20V breakdown voltage exceeds the maximum circuit potential. Consider the SOT-23 package size constraints and thermal dissipation requirements for continuous currents near the 6.5A limit.

Part Context

This part belongs to the Alpha & Omega Semiconductor line of small-signal power MOSFETs designed for surface-mount assembly. It serves as a compact solution for power management in portable electronics. The SOT-23 form factor allows for dense PCB layouts while maintaining robust electrical performance for switching duties.

Replacement Considerations

Direct replacements must match the 20V VDS, N-channel configuration, and SOT-23 footprint. Verify that substitute parts offer comparable RDS(ON) at the target gate drive voltage and similar gate charge characteristics to maintain switching speed.