AO3418

$0.39

Description：MOSFET N-CH 30V 3.8A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1d49f1a4031d Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.8A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3418

Overview

The AO3418 is a 30V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. The device features a maximum drain-source voltage of 30V and a continuous drain current of 3.8A at VGS=10V. On-state resistance is specified as less than 55mΩ at VGS=10V, less than 65mΩ at VGS=4.5V, and less than 85mΩ at VGS=2.5V. It is housed in a SOT-23 package.

Feature Summary

Advanced trench technology for excellent on-resistance and low gate charge
Capable of operation with gate voltages as low as 2.5V
Suitable for use as a load switch or in PWM applications

Applications

Load switching
PWM applications

Procurement Notes

Verify the specific datasheet revision (Rev 8.1) and manufacturer documentation when sourcing. Confirm that the component matches the exact AO3418 designation from Alpha & Omega Semiconductor Inc. Ensure compatibility with intended thermal management requirements based on the junction-to-ambient resistance specifications provided in official literature.

Selection Notes

Select this component for designs requiring an N-channel MOSFET with low gate drive requirements down to 2.5V. Consider the 30V breakdown voltage and 3.8A continuous current rating against circuit demands. Evaluate the thermal performance characteristics relative to the expected operating environment and board layout constraints.

Part Context

This part belongs to the AO34 series of surface-mount MOSFETs produced by Alpha & Omega Semiconductor Inc. The AO3418 specifically addresses applications needing efficient switching with minimal gate drive power. It is designed for general-purpose switching tasks within consumer electronics and portable devices where space and efficiency are critical factors.