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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.8A SOT23-3
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3418L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, enabling efficient operation with gate voltages as low as 2.5V. The device features a drain-source voltage rating of -30V and a continuous drain current capacity of -3.8A. On-resistance specifications include less than 60mΩ at VGS = 10V, less than 70mΩ at VGS = 4.5V, and less than 155mΩ at VGS = 2.5V.
Feature Summary
- Advanced trench technology design for optimized performance
- Low gate charge facilitating efficient switching operations
- Compatible with low gate drive voltages down to 2.5V
Applications
- Load switching circuits
- Pulse Width Modulation (PWM) applications
- General purpose switching tasks
Procurement Notes
Verify the specific ordering suffix 'L' corresponds to the Green Product option, which indicates a lead-free package compliant with RoHS and Sony 259 specifications. Confirm that the electrical characteristics match the standard AOU401/AO3418 series requirements for your circuit design. Ensure component authenticity through authorized distribution channels to guarantee adherence to manufacturer quality standards.
Selection Notes
Select this component when a P-channel MOSFET with low gate drive requirements is necessary. The device is suitable for applications requiring operation with gate voltages as low as 2.5V. Consider the thermal management capabilities and the specific on-resistance values at different gate voltages to ensure compatibility with the intended load and control logic levels.
Part Context
This part belongs to the Alpha & Omega Semiconductor discrete semiconductor transistor category. It is an enhancement mode field effect transistor designed for surface mount applications. The product line emphasizes efficiency through advanced trench technology, targeting modern electronic systems that require compact and high-performance switching solutions.
Replacement Considerations
The AO3418L is electrically identical to the standard AO3418 model. Designers may substitute one for the other without modifying circuit parameters, provided the packaging and pinout configurations are compatible with the existing board layout.
