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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.6A SOT23-3
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3456 is a 30V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current of 3.6A at VGS=10V. The device exhibits a low on-resistance of less than 50mΩ at VGS=10V and less than 70mΩ at VGS=4.5V. Packaged in an SOT-23 surface-mount format, it supports a junction temperature range from -55°C to 150°C with a power dissipation rating of 1W at 25°C ambient.
Feature Summary
- Low on-state resistance for efficient power handling
- RoHS and Halogen-Free compliant construction
Applications
- Load switch circuits
- PWM applications
Procurement Notes
Verify the component authenticity against official Alpha & Omega Semiconductor documentation before integration. Confirm that the specific package variant matches the required SOT-23 footprint and pinout configuration. Ensure compliance with RoHS and Halogen-Free standards as specified in the manufacturer's datasheet to meet environmental regulations.
Selection Notes
Select this component for designs requiring a compact N-Channel MOSFET with a 30V breakdown voltage. Consider the low gate charge and fast switching characteristics suitable for high-frequency PWM operations. Evaluate thermal management requirements based on the 1W power dissipation limit and the specific PCB copper area available for heat sinking.
Part Context
This part belongs to the Alpha & Omega Semiconductor discrete semiconductor portfolio, specifically within their N-Channel MOSFET category. It utilizes advanced trench technology to achieve low on-resistance in a small SOT-23 package, targeting portable electronics and battery-powered devices where space efficiency and power loss reduction are critical design constraints.
Replacement Considerations
Consult official Alpha & Omega Semiconductor cross-reference lists for verified substitutes. Do not assume functional equivalence with other manufacturers' parts without validating absolute maximum ratings and electrical parameters against the AO3456 datasheet specifications.
