AO3460

$0.28

Description：MOSFET N-CH 60V 650MA SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6fe6eeaba0dc Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 650MA SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：650mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：27 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3460

Overview

The AO3460 is a 60V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge within a compact SOT-23 footprint. The device supports operation with gate voltages as low as 4.5V and includes ESD protection. Key electrical parameters include a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 0.65A at VGS=10V, and an on-resistance (RDS(ON)) of less than 1.7Ω at VGS=10V and less than 2Ω at VGS=4.5V.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge.
Operates effectively with gate voltages as low as 4.5V.
Integrated electrostatic discharge (ESD) protection.

Applications

Load switching
Low current inverters
Low current DC-DC converters

Procurement Notes

Verify the component matches the specific AO3460 designation from Alpha & Omega Semiconductor Inc. Confirm the package type is SOT-23 and that the datasheet revision aligns with the required specifications. Ensure the part meets RoHS compliance standards if applicable to your manufacturing process. Cross-reference the manufacturer's official documentation for any updates regarding product qualification or design changes.

Selection Notes

Select this component for applications requiring a small SOT-23 footprint with reliable performance in low-current environments. The low gate charge and ability to operate at VGS=4.5V make it suitable for battery-powered systems. Consider the thermal characteristics and safe operating area when designing circuits that may experience transient loads or elevated temperatures.

Part Context

This N-channel MOSFET belongs to the family of enhancement mode field effect transistors designed for general-purpose switching applications. It is engineered for consumer market use, offering a balance of electrical performance and physical size. The device is intended for surface-mount assembly, facilitating automated placement in compact electronic designs.