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The AO3460L is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge within a compact SOT-23 footprint. The device supports operation with gate voltages as low as 4.5V and includes ESD protection. Key electrical specifications include a Drain-Source Voltage (VDS) of 60V, a Continuous Drain Current (ID) of 0.65A at VGS=10V, and a maximum On-State Resistance (RDS(ON)) of less than 1.7Ω at VGS=10V and less than 2Ω at VGS=4.5V.
Verify the specific ordering suffix 'L' against official Alpha & Omega Semiconductor documentation to confirm environmental compliance status, such as halogen-free or lead-free characteristics. Ensure that the selected component matches the required package type and thermal ratings for the intended application environment before finalizing procurement.
Select this component for applications requiring a small SOT-23 footprint with a 60V breakdown voltage. Consider the low gate charge and 4.5V gate drive capability for efficiency in battery-powered or low-power systems. Evaluate the thermal resistance and power dissipation limits relative to the expected duty cycle and ambient temperature conditions.
The AO3460L belongs to the AO3460 series of N-Channel MOSFETs from Alpha & Omega Semiconductor. This series is designed for general-purpose switching applications where space constraints and low on-resistance are critical. The L variant typically denotes specific environmental or packaging attributes while maintaining identical electrical performance to the standard AO3460.
AO3460