AO3480

Description：MOSFET N-CH 30V 5.7A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:c7167fb13221 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.7A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：26.5mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3480

Overview

The AO3480 is a single N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes TrenchFET technology and is housed in an SOT-23 surface-mount package. The device features a drain-source voltage rating of 30 V and a continuous drain current of 5.7 A at 25°C ambient temperature. Key electrical parameters include a maximum on-resistance of 26.5 mΩ at 10 V gate drive and 5.7 A drain current, with a threshold voltage maximum of 1.45 V at 250 µA.

Feature Summary

Utilizes advanced TrenchFET technology for optimized performance
Designed for low-voltage, high-speed switching applications
Provides efficient power management through low on-resistance

Applications

Power management circuits
Load switches
DC-DC converters

Procurement Notes

Verify the specific manufacturer datasheet to confirm exact pinout configurations and absolute maximum ratings before integration. Ensure that thermal management requirements align with the specified operating conditions and package limitations. Cross-reference ordering information with official distributor channels to ensure component authenticity and compliance with relevant regulatory standards.

Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with a 30 V breakdown voltage. The SOT-23 package suits space-constrained PCB layouts. Evaluate the 26.5 mΩ on-resistance against load current requirements to determine if additional thermal dissipation measures are necessary for the specific application environment.

Part Context

This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically utilizing TrenchFET technology. It is categorized as a single FET designed for general-purpose switching. The SOT-23 packaging standard facilitates automated assembly processes commonly used in consumer electronics and industrial control systems.