AO4266E

Overview

The AO4266E is a 60V N-Channel AlphaSGT™ MOSFET in an SOIC-8 package. It features a maximum drain current of 11A at VGS=10V and low on-resistance below 13.5mΩ at VGS=10V, or 18mΩ at VGS=4.5V. The device supports logic-level gate drive and includes typical ESD protection rated HBM Class 2. Thermal characteristics include a junction-to-ambient resistance of 75°C/W and a maximum junction temperature range from -55°C to 150°C.

Feature Summary

• Utilizes AlphaSGT™ trench technology for optimized performance
• Features low RDS(ON) supporting efficient power switching
• Designed with logic level gate drive capability
• Includes built-in ESD protection mechanisms

Applications

• High frequency switching circuits
• Synchronous rectification applications

Procurement Notes

Verify the specific ordering suffix matches the required package form factor and reel quantity. Confirm compliance with RoHS and halogen-free standards as stated in the datasheet. Ensure the component meets the intended thermal management requirements based on the specified junction-to-ambient resistance values provided in the official documentation.

Selection Notes

Select this component when a 60V N-Channel MOSFET with high current handling is required. The low on-resistance and fast switching speeds make it suitable for power management designs. Consider the thermal constraints and ensure adequate board layout to maintain safe operating temperatures within the specified limits.

Part Context

This part belongs to the AlphaSGT™ family of power MOSFETs manufactured by Alpha & Omega Semiconductor. It is designed for general-purpose power switching applications requiring high efficiency and reliability. The SOIC-8 package provides a compact solution for surface mount assembly in various electronic devices.

Replacement Considerations

AO4266