AO4296

AO4296

$0.46
  • Description:MOSFET N-CH 100V 13.5A 8SOIC
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:fe1e2ecd4ca8 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 13.5A 8SOIC
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.3mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3130 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AO4296

Overview

The AO4296 is a 100V N-Channel AlphaSGT™ MOSFET in an SOIC-8 package. It features a maximum drain-source voltage of 100V and continuous drain current ratings of 3.5A at 70°C and 13.5A at 25°C. The on-resistance is less than 8.3mΩ at VGS=10V and 10.6mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.3V to 2.3V, total gate charge of 42nC to 60nC at 10V, and input capacitance of 3130pF. Thermal characteristics specify a junction-to-ambient resistance of 75°C/W and a maximum junction temperature of 150°C.

Feature Summary

  • Utilizes AlphaSGT™ Trench Power technology for low on-resistance and gate charge.
  • Verified with 100% Unclamped Inductive Switching (UIS) testing.
  • RoHS and Halogen-Free compliant construction.

Applications

  • Synchronous rectification for AC/DC quick chargers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and form factor. Ensure that the component meets all relevant environmental compliance standards required by your target market before finalizing procurement decisions.

Selection Notes

Select this component when a 100V N-Channel MOSFET with low RDS(ON) is required for synchronous rectification applications. Consider the thermal constraints of the SOIC-8 package and the specific gate drive voltage requirements relative to the on-resistance performance curves provided in the datasheet.

Part Context

Alpha & Omega Semiconductor manufactures the AO4296 as part of its power management portfolio. This device belongs to the AlphaSGT™ family, designed to offer improved efficiency through reduced switching losses and conduction losses compared to standard trench technologies.

Replacement Considerations

AO4296

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 10.5A.

Is the AO4296 tested for avalanche energy?

Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

AO4296AO4296
$0.46
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