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The AO4296 is a 100V N-Channel AlphaSGT™ MOSFET in an SOIC-8 package. It features a maximum drain-source voltage of 100V and continuous drain current ratings of 3.5A at 70°C and 13.5A at 25°C. The on-resistance is less than 8.3mΩ at VGS=10V and 10.6mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.3V to 2.3V, total gate charge of 42nC to 60nC at 10V, and input capacitance of 3130pF. Thermal characteristics specify a junction-to-ambient resistance of 75°C/W and a maximum junction temperature of 150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and form factor. Ensure that the component meets all relevant environmental compliance standards required by your target market before finalizing procurement decisions.
Select this component when a 100V N-Channel MOSFET with low RDS(ON) is required for synchronous rectification applications. Consider the thermal constraints of the SOIC-8 package and the specific gate drive voltage requirements relative to the on-resistance performance curves provided in the datasheet.
Alpha & Omega Semiconductor manufactures the AO4296 as part of its power management portfolio. This device belongs to the AlphaSGT™ family, designed to offer improved efficiency through reduced switching losses and conduction losses compared to standard trench technologies.
AO4296
The maximum pulsed drain current is 10.5A.
Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing.