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The AO4314 is a 36V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features an extremely low combination of RDS(ON) and Crss to minimize power losses, alongside a Schottky-style soft recovery body diode. The device is rated for a continuous drain current of 20A at VGS=10V, with RDS(ON) less than 6mΩ at VGS=10V and less than 8.5mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and package marking against official Alpha & Omega Semiconductor documentation before integration. Confirm that the component meets RoHS compliance standards required by your manufacturing process. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual operating conditions.
Select this component when circuit requirements demand low on-state resistance at both 10V and 4.5V gate drive levels. The SOIC-8 package suits space-constrained designs needing dual-drain configurations. Evaluate thermal dissipation capabilities based on the specific PCB copper area and airflow conditions available in the final assembly.
This part belongs to the Alpha & Omega Semiconductor line of N-Channel Enhancement Mode Field Effect Transistors. It utilizes advanced trench technology to deliver superior performance compared to standard planar devices. The product is designed and qualified for the consumer market sector.
Check electrical compatibility regarding voltage ratings, current handling, and package dimensions before substituting. Verify that alternative components offer equivalent or better RDS(ON) characteristics and switching speeds to maintain system efficiency.
The AO4314 supports a pulsed drain current (IDM) of up to 60A.
Yes, the AO4314 is 100% UIS (Unclamped Inductive Switching) tested.