AO4405E

Q: What is the maximum body-diode reverse recovery time?

The maximum body-diode reverse recovery time (trr) is 9ns when measured at IF=-6A and dI/dt=500A/μs.

Q: Is the device tested for unclamped inductive switching?

Yes, the AO4405E is 100% UIS tested to ensure reliability during inductive load switching events.

Description：MOSFET P-CHANNEL 30V 6A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:8abc4f027dcb Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CHANNEL 30V 6A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：495 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4405E

Overview

The AO4405E is a 30V P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing Trench Power LV technology. It features a maximum continuous drain current of -6A at VGS=-10V and a low on-resistance of less than 45mΩ at VGS=-10V, or less than 80mΩ at VGS=-4.5V. The device is housed in an SOIC-8 package with a thermal resistance (RθJA) of 85°C/W. Electrical characteristics include a gate threshold voltage range of -1.5V to -2.5V and a total gate charge of 16nC at 10V. It supports a maximum junction temperature of 150°C.

Feature Summary

Trench Power LV technology provides low on-resistance and low gate charge for efficient switching.
Integrated ESD protection suitable for typical ESD protection applications.
100% UIS and Rg tested to ensure reliability under inductive load switching conditions.

Applications

Load switch circuits
PWM applications
Typical ESD protection

Procurement Notes

Verify the specific ordering suffix 'E' against the manufacturer's official documentation to confirm packaging details, as standard suffixes may indicate variations in reel specifications or tape-and-reel configurations. Ensure the component meets RoHS and Halogen-Free compliance requirements if mandated by the design specification. Cross-reference the datasheet revision date to confirm the validity of the electrical parameters provided.

Selection Notes

Select this component for designs requiring a 30V P-Channel MOSFET with optimized switching performance. The low gate charge facilitates faster switching speeds and reduced driver power consumption. Verify that the required on-resistance at the specific operating gate voltage aligns with the <80mΩ rating at -4.5V or <45mΩ at -10V to meet thermal and efficiency targets.

Part Context

This part belongs to the AO44 series of P-Channel MOSFETs from Alpha & Omega Semiconductor. The series utilizes trench technology to achieve low RDS(ON) values within an 8-pin SOIC package. The AO4405E variant specifically denotes the packaged form factor intended for surface-mount assembly, maintaining the core electrical characteristics of the AO4405 family.