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The AO4411 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver excellent RDS(ON) and ultra-low gate charge. The device features a Drain-Source Voltage (VDS) of -30V and a Continuous Drain Current (ID) of -8A at VGS=-10V. The On-Resistance (RDS(ON)) is less than 32mΩ at VGS=-10V and less than 55mΩ at VGS=-4.5V. It is housed in an SOIC-8 package with a maximum junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision, as AOS reserves the right to change specifications without notice. Confirm that the component meets RoHS and Sony 259 lead-free standards if required. Ensure the ordering suffix matches the desired packaging format. Evaluate suitability for intended applications before purchase.
Select this component for designs requiring a compact P-Channel MOSFET with low conduction losses. Consider the thermal resistance values when designing heat dissipation strategies. Verify compatibility with logic-level drive voltages given the threshold voltage specifications.
This part belongs to the Alpha & Omega Semiconductor P-Channel MOSFET family. It is designed for general-purpose power switching tasks where space efficiency and performance are critical. The manufacturer provides comprehensive electrical and thermal characterization data to support circuit design.
Direct substitutes must match the -30V rating, -8A current capacity, and SOIC-8 package. Verify pinout compatibility and ensure equivalent or superior RDS(ON) and gate charge specifications.
Yes, the datasheet confirms that the device undergoes 100% UIS testing.
The absolute maximum rating for Gate-Source Voltage (VGS) is ±20V.