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The AO4413 is a 30V P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, with a 25V gate rating. Key electrical parameters include a drain-source voltage of -30V, a continuous drain current of -15A at VGS=-20V, and an on-resistance of less than 7mΩ at VGS=-20V or less than 8.5mΩ at VGS=-10V. The device is housed in an SOIC-8 package and supports a maximum junction temperature of 150°C.
Verify the specific datasheet revision (e.g., Rev 9) and manufacturer documentation when sourcing. Confirm that the component meets RoHS and Halogen-Free compliance requirements if necessary for your project. Ensure the SOIC-8 package dimensions match your PCB footprint design constraints before finalizing procurement.
Select this component for circuits requiring a 30V P-Channel MOSFET with high current handling capabilities up to 15A. Consider the thermal resistance characteristics and ensure adequate board space for heat dissipation in the SOIC-8 package. Verify gate drive voltage levels align with the specified thresholds for optimal on-resistance performance.
The AO4413 belongs to the family of P-Channel MOSFETs from Alpha & Omega Semiconductor. It is designed for general-purpose small signal applications where efficient switching and low conduction losses are required. The device is intended for consumer market applications and is not authorized for use in life support devices or systems without explicit liability assumptions.
AO4413A
The maximum gate-source voltage rating is ±25V.
Yes, the device is 100% UIS tested and features single pulse avalanche capability.