AO4447AL

Description：MOSFET P-CH 30V 17A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:feff9cac2af5 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 17A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4447AL

Overview

The AO4447AL is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It features advanced trench technology for low on-resistance and gate charge. Key electrical parameters include a drain-source voltage (Vdss) of 30 V, continuous drain current (Id) of 17 A at 25°C ambient, and maximum power dissipation of 3.1 W. The device operates within a junction temperature range of -55°C to 150°C. Gate threshold voltage is 1.6 V max at 250 µA, with a maximum gate-source voltage of ±20 V. On-resistance is 7 mΩ max at 10 V gate drive and 17 A. Input capacitance is 5500 pF max at 15 V.

Feature Summary

Utilizes advanced trench technology to achieve excellent on-resistance characteristics.

Applications

Load switch applications

Procurement Notes

Verify the specific suffix 'AL' against the manufacturer's official datasheet to confirm exact electrical tolerances and package variations. Ensure compatibility with RoHS3 standards if required by the design specification. Confirm that the component status aligns with long-term availability requirements for the intended production lifecycle.

Selection Notes

Select this component for designs requiring a P-channel MOSFET with high current handling capability in an 8-SOIC package. Consider the thermal performance limits and gate drive requirements when integrating into low-side or high-side switching circuits. Verify that the 30 V rating provides sufficient headroom for the target application voltage levels.

Part Context

This part belongs to the AO44 series of single FETs from Alpha & Omega Semiconductor. It is designed as a surface-mount solution for power management tasks. The device is electrically related to other variants in the family but offers specific performance metrics tailored for efficient load switching and power conversion roles.