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Product Detailed Parameters
- Description：MOSFET N-CH 30V 15A 8SO
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4476A is a surface-mount N-channel enhancement mode field-effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds, making it suitable for low-side switching applications in notebook CPU core power conversion circuits. The device is housed in an 8-SOIC package with a maximum drain-source voltage of 30 V and a continuous drain current of 15 A at 25°C ambient temperature. Key electrical parameters include a maximum gate charge of 24 nC at 10 V, an input capacitance of 1380 pF at 15 V, and a maximum on-resistance of 7.7 mΩ at 15 A and 10 V gate drive. The component operates within a junction temperature range of -55°C to 150°C and complies with RoHS3 standards.
Feature Summary
- Advanced trench technology implementation for optimized performance
- Low on-resistance characteristics for efficient power handling
- High shoot-through immunity for reliable operation
- Optimized body diode characteristics
Applications
- Notebook CPU core power conversion
- Low-side switching applications
- General purpose power management circuits
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging configuration, such as tape and reel or cut tape, as these affect handling but not electrical function. Confirm compliance status with RoHS3 and REACH regulations if required by your manufacturing environment. Check the manufacturer's latest product change notices for any updates regarding subcontractor names or assembly sources that may impact supply chain traceability.
Selection Notes
Select this component when a 30 V N-channel MOSFET with high current capability is required for low-side switching. Ensure the driving circuit can provide at least 10 V gate drive to achieve the specified minimum on-resistance. Consider the thermal dissipation capabilities of the 8-SOIC package relative to the expected power loss in the application. Verify that the input capacitance and gate charge values align with the switching frequency requirements of the target design.
Part Context
This part belongs to the AO44 series of power MOSFETs from Alpha & Omega Semiconductor. The series focuses on providing robust solutions for portable electronics and computing applications where space constraints and efficiency are critical. The AO4476A specifically targets the demand for high-current density devices in compact surface-mount packages.
Replacement Considerations
Publicly confirmed substitute part numbers include AO4447A and AO4406A. Verify pinout compatibility and electrical parameter margins before substitution.
