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Product Detailed Parameters
- Description：SOP-8 MOSFETS ROHS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4485 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by UMW (UTD Semiconductor). It utilizes advanced trench technology to achieve low on-resistance and gate charge. Key electrical parameters include a drain-source voltage of -40V, a continuous drain current of -10A at 25°C, and a maximum static drain-source on-resistance of 15mΩ at VGS=-10V. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.
Feature Summary
- Advanced trench technology for excellent RDS(ON) performance
- Low gate charge characteristics suitable for efficient switching
- Designed specifically for DC-DC converter applications
Applications
- DC-DC converter circuits
- Power management systems
- Load switch implementations
Procurement Notes
Verify the manufacturer designation as UMW or UTD Semiconductor Co., Limited when sourcing this component. Confirm the package type is SOP-8 and check for standard tape and reel delivery modes. Ensure the part meets consumer market qualification standards, as critical life support applications are explicitly excluded from authorization.
Selection Notes
Select the AO4485 for designs requiring a -40V P-Channel MOSFET with high current handling capabilities up to -10A. Consider its low thermal resistance and fast switching speeds for power conversion efficiency. Verify that the operating environment remains within the specified -55°C to 150°C junction temperature limits for reliable performance.
Part Context
This component belongs to the category of single discrete semiconductor transistors, specifically Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It serves as a fundamental switching element in electronic circuits, providing control over current flow based on gate voltage signals within power supply architectures.
Replacement Considerations
The AO4485L is electrically identical to the AO4485 and can be used as a direct substitute. Both devices share the same specifications and functional characteristics.
