AO4498EL

Description：MOSFET N-CH 30V 18A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:936552a2b974 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 18A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2760 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4498EL

Overview

The AO4498EL is a 30V N-Channel MOSFET in an SOIC-8 package. It features a maximum drain-source voltage of 30V and continuous drain current of 18A at VGS=10V. On-resistance is less than 5.8mΩ at VGS=10V and 8.5mΩ at VGS=4.5V. The device includes ESD protection, 100% Rg testing, and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench MOSFET technology for extremely low on-resistance
Integrated electrostatic discharge (ESD) protection
Low resistance package design
100% gate resistance tested

Applications

Load switch applications
Battery protection circuits

Procurement Notes

Verify the specific ordering suffix 'EL' against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the datasheet revision date with your procurement records to ensure technical accuracy.

Selection Notes

Select this component for applications requiring low on-resistance at 30V ratings. Consider the thermal characteristics and package limitations when designing for high-current load switching or battery protection scenarios. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance.

Part Context

This part belongs to the Alpha & Omega Semiconductor N-Channel MOSFET family. It utilizes advanced trench technology to achieve low on-resistance. The device is designed for surface-mount assembly in standard SOIC-8 packages, suitable for compact electronic designs requiring efficient power switching capabilities.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification sheet.