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The AO4611 is a dual N-channel and P-channel MOSFET from Alpha & Omega Semiconductor, housed in an SOIC-8 surface-mount package. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device supports a drain-source voltage of 60V with continuous currents of 6.3A for the N-channel and 4.9A for the P-channel. Key electrical parameters include an on-state resistance of 25mΩ (N) and 42mΩ (P), a gate charge of 24.2nC/22.8nC, and an input capacitance of 2300pF at 30V. It operates within a temperature range of -55°C to 150°C.
Verify component authenticity through authorized distribution channels to ensure reliability. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Cross-reference the manufacturer datasheet for RoHS compliance status and lead time requirements prior to finalizing procurement orders.
Select this component for designs requiring complementary switching in limited space. Ensure the 60V rating exceeds peak circuit voltages. Evaluate thermal dissipation capabilities against the 2W power limit. Verify that the gate charge specifications align with the driving controller's output current capabilities.
This part belongs to the AO46xx series of dual MOSFETs designed for high-efficiency power switching. It serves as a modern alternative to discrete transistor pairs, reducing board space and parasitic inductance. The SOIC-8 footprint allows for automated assembly in various consumer and industrial electronics.
Direct replacements must match the 60V rating and SOIC-8 package. Verify pinout compatibility and electrical parameters such as RDS(on) and Qg. Consider the AO4614B or AO4606 only if voltage ratings and current capacities meet the specific application requirements.