AO4611

AO4611

$1.49
  • Description:MOSFET N/P-CH 60V 8SOIC
  • Series:-

SKU:8e0b984825e5 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:25mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2300pF @ 30V, 2900pF @ 30V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4611

Overview

The AO4611 is a dual N-channel and P-channel MOSFET from Alpha & Omega Semiconductor, housed in an SOIC-8 surface-mount package. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device supports a drain-source voltage of 60V with continuous currents of 6.3A for the N-channel and 4.9A for the P-channel. Key electrical parameters include an on-state resistance of 25mΩ (N) and 42mΩ (P), a gate charge of 24.2nC/22.8nC, and an input capacitance of 2300pF at 30V. It operates within a temperature range of -55°C to 150°C.

Feature Summary

  • Complementary N/P-channel configuration in a single compact package
  • Advanced trench technology for optimized performance
  • Low on-resistance and gate charge characteristics

Applications

  • DC-DC converter circuits
  • Power management modules
  • Motor control applications

Procurement Notes

Verify component authenticity through authorized distribution channels to ensure reliability. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Cross-reference the manufacturer datasheet for RoHS compliance status and lead time requirements prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring complementary switching in limited space. Ensure the 60V rating exceeds peak circuit voltages. Evaluate thermal dissipation capabilities against the 2W power limit. Verify that the gate charge specifications align with the driving controller's output current capabilities.

Part Context

This part belongs to the AO46xx series of dual MOSFETs designed for high-efficiency power switching. It serves as a modern alternative to discrete transistor pairs, reducing board space and parasitic inductance. The SOIC-8 footprint allows for automated assembly in various consumer and industrial electronics.

Replacement Considerations

Direct replacements must match the 60V rating and SOIC-8 package. Verify pinout compatibility and electrical parameters such as RDS(on) and Qg. Consider the AO4614B or AO4606 only if voltage ratings and current capacities meet the specific application requirements.

AO4611AO4611
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