AO4619

Overview

The AO4619 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates an N-channel and a P-channel MOSFET in a single SOIC-8 package using advanced trench technology. The N-channel device supports a drain-source voltage of 30V with a continuous current of 7.4A at VGS=10V, while the P-channel device handles -30V and -5.2A at VGS=-10V. On-resistance values are less than 24mΩ for the N-channel and 46mΩ for the P-channel at VGS=±10V. Both channels undergo 100% UIS and Rg testing.

Feature Summary

• Advanced trench technology provides low gate charge and excellent on-resistance.
• Complementary configuration suitable for inverter applications.
• Both N-channel and P-channel devices are tested for Unclamped Inductive Switching (UIS) capability.

Applications

• Inverter circuits
• Load switching
• Battery protection

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific lot traceability requirements against project specifications. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to prevent package degradation prior to assembly.

Selection Notes

Select this component when a matched complementary pair is required for low-voltage power management. The SOIC-8 package offers a compact footprint compared to discrete dual solutions. Evaluate thermal performance based on specific board copper area and ambient airflow, as junction-to-ambient resistance varies significantly with layout design.

Part Context

This part belongs to the Alpha & Omega Semiconductor complementary MOSFET family. It utilizes trench technology to achieve high performance in a small surface-mount package. The series targets consumer electronics and industrial systems requiring efficient power switching with minimal gate drive requirements.

Replacement Considerations

Direct pin-compatible alternatives within the same manufacturer portfolio include the AO4614B and AO4629. Verify that replacement parts meet identical voltage, current, and thermal ratings before implementation.

FAQ

What is the maximum repetitive avalanche energy rating?

The AO4619 is rated for repetitive avalanche energy testing, though specific mJ values depend on pulse width limitations and junction temperature constraints.

How does the on-resistance vary with gate voltage?

The N-channel RDS(ON) is specified at less than 24mΩ at VGS=10V and less than 36mΩ at VGS=4.5V. The P-channel RDS(ON) is less than 46mΩ at VGS=-10V and less than 72mΩ at VGS=-4.5V.

Is the body diode reverse recovery time characterized?

Yes, the N-channel body diode reverse recovery time (trr) is typically 10.5ns, and the P-channel is typically 11ns, measured at IF=7.4A/5.2A with dI/dt=100A/μs.