AO4627

$0.16

Description：MOSFET N/P-CH 30V 4.5A 8SOIC
Series：-

SKU:8728f5814399 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 4.5A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.5A, 3.5A
Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：210pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4627

Overview

The AO4627 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates an N-channel and a P-channel MOSFET in a single SOIC-8 package using advanced trench technology. The N-channel device supports a drain-source voltage of 30V with a continuous drain current of 4.5A at VGS=10V, while the P-channel device handles -30V and -3.5A at VGS=-10V. Both channels are rated for a maximum junction temperature of 150°C and have been subjected to 100% Unclamped Inductive Switching (UIS) testing.

Feature Summary

Complementary N and P channel configuration suitable for low input voltage inverter applications
Advanced trench technology providing excellent on-resistance and low gate charge
100% UIS tested for enhanced reliability under inductive load conditions

Applications

Low input voltage inverter circuits
Level shifted high side switching
General purpose power switching

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the received parts match the AO4627 designation and SOIC-8 packaging. Review the latest datasheet revision for any updates to electrical characteristics or thermal parameters before finalizing procurement specifications.

Selection Notes

Select this component when a compact complementary pair is required for low-voltage inversion tasks. Ensure the application operates within the specified 30V drain-source limits and respects the continuous current ratings of 4.5A for the N-channel and -3.5A for the P-channel. Verify thermal management requirements against the provided junction-to-ambient resistance values.

Part Context

This part belongs to the Alpha & Omega Semiconductor complementary MOSFET family. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The dual-channel design allows for space-saving implementations in circuits requiring both high-side and low-side switching capabilities within a single footprint.

Replacement Considerations

Direct substitutes include other complementary N/P MOSFETs with similar 30V ratings and SOIC-8 packaging, such as the AO4622 or AO4607. Verify pinout compatibility and ensure that the alternative components meet or exceed the required current handling and thermal performance specifications.