AO4708

Overview

The AO4708 is a 30V N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing SRFET technology with an integrated Schottky diode. It operates in an 8-SOIC package with a continuous drain current of 15A at VGS=10V and a maximum pulsed drain current of 80A. The device features a low on-resistance of less than 8.7mΩ at VGS=10V and 10.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage ranging from 1.4V to 2.4V, total gate charge of 42nC at 10V, and input capacitance of 2800pF. Thermal characteristics specify a steady-state power dissipation of 3.1W at 25°C ambient temperature.

Feature Summary

• Integrates a monolithic Schottky diode to provide soft recovery characteristics and minimize reverse recovery losses.
• Employs advanced trench technology to achieve low gate charge and high switching efficiency.
• Designed for low-side switching applications in switch-mode power supplies and load switching circuits.

Applications

• Low side FETs in Switch-Mode Power Supplies (SMPS)
• Load switching circuits
• General purpose power switching applications

Procurement Notes

Verify the specific manufacturing date code and lot traceability upon receipt, as component specifications may evolve through revisions. Confirm that the delivered units match the SOIC-8 physical dimensions and pinout configuration detailed in the official datasheet. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering to prevent package damage during assembly processes.

Selection Notes

Select this component when a 30V rating and integrated body-diode functionality are required for synchronous rectification or freewheeling duties. The low gate charge supports high-frequency operation, while the 8-SOIC package facilitates surface-mount assembly. Evaluate thermal management needs against the 3.1W steady-state dissipation limit and ensure the driving circuit can supply sufficient voltage to fully enhance the channel below 10.5mΩ.

Part Context

This part belongs to the Alpha & Omega Semiconductor SRFET family, which combines standard MOSFET performance with integrated diode structures. The AO4708 specifically targets consumer and industrial power supplies where space constraints and switching efficiency are critical. It serves as a discrete solution for low-voltage, medium-current applications requiring robust avalanche capability and reliable soft-recovery behavior.

Replacement Considerations

Direct substitutes must maintain the 30V N-Channel specification, 8-SOIC package, and integrated Schottky diode topology. Verify that alternative components offer comparable RDS(ON) values at both 4.5V and 10V gate voltages to ensure equivalent drive requirements and conduction losses in the target application circuit.

FAQ

What is the reverse recovery characteristic of the integrated diode?

The AO4708 features a Soft Recovery MOSFET design with an integrated Schottky diode, resulting in a typical reverse recovery time (trr) of 13ns and a reverse recovery charge (Qrr) of 12nC under specified test conditions.

Is the device rated for repetitive avalanche energy?

Yes, the AO4708 is 100% UIS tested and rated for a repetitive avalanche energy of 94mJ with an inductance of 0.3mH and a peak avalanche current of 25A.