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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.9A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：630pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4800 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 6.9A at VGS=10V. On-resistance (RDS(ON)) is less than 27mΩ at VGS=10V, 32mΩ at VGS=4.5V, and 50mΩ at VGS=2.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Feature Summary
- Advanced trench technology for optimized RDS(ON) and low gate charge
- Dual configuration suitable for switch and synchronous rectifier applications
- 100% tested for Unclamped Inductive Switching (UIS) capability
- Logic-level gate drive compatibility
Applications
- Buck converters
- Synchronous rectification circuits
- Power management systems
Procurement Notes
Verify the specific datasheet revision and manufacturing lot details upon procurement. Confirm that the component meets RoHS compliance standards as specified by the manufacturer. Ensure thermal design accounts for the junction-to-ambient resistance values provided in the official documentation to maintain safe operating temperatures during operation.
Selection Notes
Select this component for low-voltage, high-current switching applications requiring compact dual-MOSFET solutions. Evaluate the gate threshold voltage and total gate charge against the driving circuit capabilities. Consider the thermal performance characteristics when designing heat dissipation strategies for the target PCB layout.
Part Context
The AO4800 belongs to the family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It is designed to replace single MOSFET configurations in space-constrained designs. The part integrates two independent channels in a single SOIC-8 package to reduce board area and improve switching efficiency in power conversion topologies.
Replacement Considerations
AO4800BL
FAQ
What is the maximum continuous drain current for the AO4800?
The maximum continuous drain current (ID) is 6.9A when measured at VGS=10V.
Is the AO4800 rated for unclamped inductive switching?
Yes, the device is 100% UIS tested and supports repetitive avalanche energy ratings.
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(th)) ranges from 0.7V to 1.5V under standard test conditions.
