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The AO4800BL is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge within an SOIC-8 surface mount package. The device features a drain-source voltage of 30V, a continuous drain current of 6.9A at VGS=10V, and an on-resistance below 27mΩ at VGS=10V. It operates across a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W.
Verify the specific suffix designation against official manufacturer documentation before procurement. Confirm that the component meets RoHS and Sony 259 specifications as required by your supply chain standards. Ensure the ordering information matches the exact electrical ratings and package type needed for your design implementation.
Select this component when a dual N-channel MOSFET is required for space-constrained synchronous rectification. Evaluate the thermal performance based on your specific board copper area and ambient conditions, as the junction-to-ambient resistance varies significantly with layout. Consider the gate charge requirements for your driving circuitry to ensure efficient switching transitions.
The AO4800BL belongs to the AO4800 series from Alpha & Omega Semiconductor, designed for consumer market applications using standard sub-micron low voltage N-channel processes. The 'L' suffix typically denotes a green compound molding variant compared to the standard AO4800B, though both share identical electrical characteristics and pinouts.
Direct functional equivalents include the AO4800B. Other dual N-channel 30V MOSFETs in SOIC-8 packages may serve as alternatives if electrical parameters such as RDS(ON), ID, and package dimensions are compatible with the existing design constraints.