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The AO4801AL is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a 30V drain-source voltage (VDS) and a continuous drain current of -5.6A at VGS=-10V. The device offers an on-resistance (RDS(ON)) of less than 42mΩ at VGS=-10V, 52mΩ at VGS=-4.5V, and 75mΩ at VGS=-2.5V. Packaged in an SOIC-8 surface-mount configuration, it supports a maximum junction temperature range from -55°C to 150°C. Electrical characteristics include a gate threshold voltage of -1.3V max, total gate charge of 11nC at 4.5V, and input capacitance of 1120pF. The component has been tested for 100% UIS and Rg stability.
Verify the specific ordering suffix and package variant when sourcing the AO4801AL, as manufacturing revisions may affect marking or pinout details. Confirm that the supplier provides the official datasheet revision history to ensure compatibility with design requirements. Check for RoHS compliance status and availability of the SOIC-8 package type directly from authorized distributors or the manufacturer.
Select the AO4801AL for designs requiring dual P-channel isolation within a compact SOIC-8 footprint. Ensure the gate drive voltage meets the specified thresholds for desired RDS(ON) performance, particularly noting the lower resistance at -10V compared to -2.5V. Consider thermal management strategies based on the provided junction-to-ambient thermal resistance values for the intended operating environment.
The AO4801AL belongs to the Alpha & Omega Semiconductor dual MOSFET family, designed for consumer market applications. It utilizes trench technology to achieve high density and low on-resistance. The component is distinct from single-channel variants like the AO4701 and other dual configurations such as the AO4803A, offering specific electrical characteristics tailored for efficient power management in portable devices.
Public confirmed substitute part numbers are not available in the verified source material.