ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 5A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：46mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The AO4803AL is a dual P-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of -30V and a continuous drain current of -5A at VGS=-10V. On-resistance is specified as less than 46mΩ at VGS=-10V and less than 74mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Feature Summary
- Advanced trench technology for optimized on-resistance and switching performance
- Dual configuration suitable for load switching and PWM applications
- Validated for 100% unclamped inductive switching (UIS) reliability
Applications
- Load switching circuits
- Pulse-width modulation (PWM) control systems
Procurement Notes
Verify the specific suffix 'AL' against official manufacturer documentation, as standard datasheets typically reference the base model AO4803A. Confirm RoHS compliance status and ensure the component meets all absolute maximum ratings for the intended operating environment before integration.
Selection Notes
Select this component for designs requiring dual P-channel isolation with low gate drive requirements. Ensure the application voltage does not exceed the -30V drain-source limit and that thermal management accommodates the junction-to-ambient resistance characteristics under steady-state conditions.
Part Context
This part belongs to the AO4803 family of dual P-channel MOSFETs from Alpha & Omega Semiconductor. It shares core electrical specifications with the standard AO4803A but may differ in packaging or manufacturing lot details associated with the specific suffix designation.
Replacement Considerations
Direct substitutes include the AO4803A. Verify pinout compatibility and thermal resistance values when replacing components in existing layouts.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage is ±20V.
Is the device tested for avalanche energy?
Yes, the datasheet confirms 100% UIS (Unclamped Inductive Switching) testing.
What is the typical gate charge at 10V?
The total gate charge (Qg) is typically 9.2nC at VGS=-10V.
