AO4806

Overview

The AO4806 is a dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor. It features a 20V drain-source voltage and a continuous drain current of 9.4A at VGS=10V. The device utilizes advanced trench technology to achieve low on-resistance, specified as less than 14mΩ at VGS=10V, 15mΩ at VGS=4.5V, 21mΩ at VGS=2.5V, and 30mΩ at VGS=1.8V. It operates over a wide gate drive range from 1.8V to 12V and includes ESD protection rated at 2000V HBM. The component is housed in an SOIC-8 package.

Feature Summary

• Advanced trench technology provides excellent on-resistance and low gate charge for efficient switching performance.
• Wide gate drive operation range supports compatibility with logic levels from 1.8V up to 12V.
• Common-drain configuration facilitates use as a uni-directional or bi-directional load switch.

Applications

• Uni-directional load switching
• Bi-directional load switching

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the received components match the SOIC-8 package outline and pin assignments detailed in the official Alpha & Omega Semiconductor documentation. Ensure compliance with RoHS standards if required by the design specifications.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact SOIC-8 footprint. The low on-resistance characteristics make it suitable for applications demanding high efficiency across various gate drive voltages. Consider the thermal dissipation capabilities relative to the expected ambient temperature and board copper area.

Part Context

This part belongs to the Alpha & Omega Semiconductor dual MOSFET family. It is designed to replace single-channel solutions where space is constrained. The common-drain architecture allows for versatile switching topologies compared to standard source-grounded configurations.

Replacement Considerations

Direct replacements must maintain the 20V rating, dual N-channel topology, and SOIC-8 package. Verify that substitute parts offer comparable RDS(ON) values at the intended gate drive voltages and similar thermal resistance characteristics.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (BVGSO) is ±12V.

Is the AO4806 tested for avalanche capability?

Yes, the datasheet indicates that the device is 100% UIS (Unclamped Inductive Switching) tested.

What is the typical total gate charge?

The typical total gate charge (Qg) is 17.9nC at VGS=4.5V, VDS=10V, and ID=9.4A.