SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4818BL_102 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage rating of 30V and a continuous drain current of 8.5A at VGS = 10V. On-resistance values are specified as less than 19mΩ at VGS = 10V and less than 28mΩ at VGS = 4.5V. It is housed in a lead-free package compliant with RoHS standards.
Verify the specific suffix BL_102 against official Alpha & Omega Semiconductor documentation to confirm packaging details and exact electrical tolerances. Ensure the component meets RoHS and Sony 259 specifications if lead-free compliance is required for the target assembly process.
Select this component for applications requiring a compact dual MOSFET solution with low conduction losses. The 30V rating and 8.5A current capacity suit low-voltage power management tasks. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
This part belongs to the AO4818 series of dual N-channel enhancement mode field effect transistors. The series is characterized by its use of advanced trench technology to achieve superior on-resistance and switching efficiency compared to standard planar technologies.
Potential substitutes include the FDS8926A, FDS8936A, and CEM2108. These alternatives share similar dual N-channel configurations and voltage ratings but require verification of pinout compatibility and specific electrical parameters.