AO4818BL_102

AO4818BL_102

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:-

SKU:3f7ea07fa2d9 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A (Ta)
  • Rds On (Max) @ Id, Vgs:19mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:888pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4818BL_102

Overview

The AO4818BL_102 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage rating of 30V and a continuous drain current of 8.5A at VGS = 10V. On-resistance values are specified as less than 19mΩ at VGS = 10V and less than 28mΩ at VGS = 4.5V. It is housed in a lead-free package compliant with RoHS standards.

Feature Summary

  • Dual N-channel configuration suitable for load switching or PWM applications
  • Advanced trench technology providing excellent RDS(ON) performance
  • Low gate charge characteristics for efficient drive requirements
  • Compatible with wide gate drive ranges from 1.8V to 12V

Applications

  • Load switch implementations
  • Pulse Width Modulation (PWM) control circuits
  • Bidirectional blocking switches

Procurement Notes

Verify the specific suffix BL_102 against official Alpha & Omega Semiconductor documentation to confirm packaging details and exact electrical tolerances. Ensure the component meets RoHS and Sony 259 specifications if lead-free compliance is required for the target assembly process.

Selection Notes

Select this component for applications requiring a compact dual MOSFET solution with low conduction losses. The 30V rating and 8.5A current capacity suit low-voltage power management tasks. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the AO4818 series of dual N-channel enhancement mode field effect transistors. The series is characterized by its use of advanced trench technology to achieve superior on-resistance and switching efficiency compared to standard planar technologies.

Replacement Considerations

Potential substitutes include the FDS8926A, FDS8936A, and CEM2108. These alternatives share similar dual N-channel configurations and voltage ratings but require verification of pinout compatibility and specific electrical parameters.

AO4818BL_102AO4818BL_102

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