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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：888pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4822A is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low gate charge and excellent on-resistance characteristics. The device is designed for surface mount applications in an 8-SOIC package, supporting a continuous drain current of 8.5A at 25°C with a drain-source voltage rating of 30V. Key electrical parameters include a maximum on-resistance of 16mΩ at VGS=10V and 26mΩ at VGS=4.5V. The component operates within a junction temperature range of -55°C to 150°C and features logic-level gate drive capabilities suitable for various switching applications.
Feature Summary
- Advanced trench technology provides low gate charge and excellent RDS(ON).
- Suitable for use as a load switch or in PWM applications.
- Logic level gate drive capability for efficient control.
Applications
- Load switching circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the exact suffix 'A' against official Alpha & Omega Semiconductor documentation, as standard listings often reference the base model AO4822. Confirm RoHS compliance status and lead-free packaging details directly with the manufacturer or authorized distributors. Ensure the component meets specific environmental standards required for the target assembly process before procurement.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET in an 8-SOIC package with a 30V rating. Consider the 8.5A continuous current capacity and low on-resistance values when evaluating thermal performance. Verify that the logic-level gate drive requirements align with the system's control voltage levels for optimal switching efficiency.
Part Context
The AO4822A belongs to the AO4822 family of dual N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. These devices are part of a broader series utilizing trench technology for improved power efficiency. The AO4822L variant is noted as a green product option, while the standard AO4822 is lead-free. The 'A' suffix typically denotes a specific revision or manufacturing lot variation within this product line.
Replacement Considerations
Publicly confirmed substitute part numbers for the AO4822A are not available in the provided source data. Engineers should consult official manufacturer cross-reference lists or datasheets for verified alternatives such as other dual N-channel MOSFETs with similar 30V/8.5A specifications and 8-SOIC packaging.
