AO4822AL

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-

SKU:41451428411c Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：888pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4822AL

Overview

The AO4822AL is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, making it suitable for load switching and PWM applications. The device features a 30V drain-source voltage rating and an 8A continuous drain current at VGS=10V. Static parameters include a maximum RDS(ON) of less than 19mΩ at VGS=10V and 26mΩ at VGS=4.5V. It is housed in an SOIC-8 package with ESD protection and undergoes 100% UIS and Rg testing.

Feature Summary

Advanced trench technology provides excellent RDS(ON) and low gate charge characteristics.
Dual configuration integrates two independent N-channel MOSFETs within a single compact package.
Includes built-in ESD protection mechanisms for enhanced circuit reliability.
Manufactured as a green product compliant with RoHS and Sony 259 specifications.

Applications

Load switching circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix 'AL' against the manufacturer's official documentation to confirm compliance with environmental standards such as RoHS and Sony 259. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Cross-reference the datasheet revision date with the delivered batch to ensure technical consistency.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a small footprint. Evaluate thermal performance based on the junction-to-ambient resistance of 90°C/W when mounted on standard FR-4 boards. Consider the gate charge values for driving requirements in high-frequency switching environments. Verify that the 30V breakdown voltage aligns with the system's maximum operating voltage margins.

Part Context

The AO4822AL belongs to the AO4822 series of dual N-channel MOSFETs produced by Alpha & Omega Semiconductor. This family leverages trench technology to optimize power efficiency in compact surface-mount packages. The device is designed to replace discrete dual-transistor solutions, simplifying PCB layout while maintaining robust electrical performance for general-purpose switching tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter overlaps with potential alternatives before implementation.