AO4822AL_102

Overview

The AO4822AL_102 is a dual N-channel MOSFET from Alpha & Omega Semiconductor, housed in an SOIC-8 package. It features a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 8A at VGS=10V. The on-resistance (RDS(ON)) is less than 19mΩ at VGS=10V and less than 26mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 1.2V to 2.4V, total gate charge (Qg) of 15nC typ at 10V, and input capacitance (Ciss) of 740pF typ. Thermal characteristics specify a maximum junction temperature of 150°C and a thermal resistance (junction-to-ambient) of 90°C/W.

Feature Summary

• Advanced trench technology provides low on-resistance and reduced gate charge for efficient switching.
• Dual configuration integrates two independent N-channel MOSFETs within a single compact package.
• Includes ESD protection and has undergone 100% UIS and Rg testing for reliability.

Applications

• Load switch applications
• PWM control circuits

Procurement Notes

Verify the specific suffix 'AL_102' against the official datasheet to confirm packaging details such as reel or tube quantity. Ensure the component matches the standard AO4822A electrical specifications. Confirm RoHS compliance status if required by your manufacturing standards. Cross-reference the manufacturer's latest documentation for any updates to pinout or absolute maximum ratings before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 30V dual N-channel solution with low conduction losses. The device is suitable for applications needing fast switching speeds due to its low gate charge and capacitance values. Consider the thermal resistance of 90°C/W when designing heat dissipation strategies for the SOIC-8 package. Ensure the gate drive voltage meets the requirements for optimal RDS(ON) performance at either 4.5V or 10V.

Part Context

The AO4822A belongs to Alpha & Omega Semiconductor's lineup of power MOSFETs utilizing trench technology. This series is designed to offer improved efficiency compared to standard planar devices. The dual configuration allows for space-saving designs in portable electronics and power management systems where multiple switching elements are needed.

Replacement Considerations

Check for direct equivalents like FDS8926A or CEM2108, ensuring pin compatibility and matching electrical limits. Verify that substitute parts meet the same 30V BVDSS and 8A ID requirements. Confirm package dimensions match the SOIC-8 footprint to ensure mechanical fit without PCB redesign.