SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4822L_101 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of 30V and a continuous drain current of 8A at VGS=10V. At this gate drive, the maximum on-resistance is less than 19mΩ, dropping below 26mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and includes ESD protection and 100% UIS testing.
Verify the specific suffix _101 against official Alpha & Omega Semiconductor documentation to confirm packaging details and availability. Ensure compliance with RoHS standards if required. Confirm that the SOIC-8 package matches your board design constraints. Review the terms and conditions of sale before finalizing orders.
Select the AO4822L_101 when a compact dual N-channel solution is needed for low-voltage switching. Its low gate charge supports efficient PWM operation. Verify thermal management requirements based on the specified junction-to-ambient resistance values for your specific PCB layout and ambient conditions.
This component belongs to the AO4822 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. The series leverages trench technology for enhanced performance in power switching applications. The part is designed for general-purpose use in consumer electronics and industrial control systems requiring reliable dual-channel switching.
Compatible alternatives include the FDS8926A, FDS8936A, and FDS9936A from Fairchild Semiconductor. These parts share similar dual N-channel configurations and voltage ratings. Verify pinout compatibility and electrical parameters before substitution.