AO4822L_101

AO4822L_101

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:-

SKU:f5e29bbd6697 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:19mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:888pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4822L_101

Overview

The AO4822L_101 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of 30V and a continuous drain current of 8A at VGS=10V. At this gate drive, the maximum on-resistance is less than 19mΩ, dropping below 26mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and includes ESD protection and 100% UIS testing.

Feature Summary

  • Dual N-channel configuration with built-in body diode
  • Advanced trench technology for low RDS(ON) and gate charge
  • ESD protected and 100% UIS tested

Applications

  • Load switches
  • PWM applications

Procurement Notes

Verify the specific suffix _101 against official Alpha & Omega Semiconductor documentation to confirm packaging details and availability. Ensure compliance with RoHS standards if required. Confirm that the SOIC-8 package matches your board design constraints. Review the terms and conditions of sale before finalizing orders.

Selection Notes

Select the AO4822L_101 when a compact dual N-channel solution is needed for low-voltage switching. Its low gate charge supports efficient PWM operation. Verify thermal management requirements based on the specified junction-to-ambient resistance values for your specific PCB layout and ambient conditions.

Part Context

This component belongs to the AO4822 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. The series leverages trench technology for enhanced performance in power switching applications. The part is designed for general-purpose use in consumer electronics and industrial control systems requiring reliable dual-channel switching.

Replacement Considerations

Compatible alternatives include the FDS8926A, FDS8936A, and FDS9936A from Fairchild Semiconductor. These parts share similar dual N-channel configurations and voltage ratings. Verify pinout compatibility and electrical parameters before substitution.

AO4822L_101AO4822L_101

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