AO4828L

Overview

The AO4828L is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench MOSFET technology to deliver low on-state resistance and reduced gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of 60V and a continuous drain current of 4.5A at VGS=10V. Key electrical parameters include an on-resistance of less than 56mΩ at VGS=10V and less than 77mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.

Feature Summary

• Advanced trench technology provides excellent on-state resistance and low gate charge characteristics.
• Fully tested for Uninterruptible Switching (UIS) capability to ensure robustness against avalanche events.
• Logic-level gate drive compatibility allows efficient operation with standard control voltages.

Applications

• Load switching circuits
• Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific suffix 'L' against the official datasheet to confirm pinout or thermal specifications match the base AO4828 model. Confirm component availability status as distribution channels may list obsolete inventory. Ensure compliance with RoHS directives if required for the target assembly process.

Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained designs. Evaluate the 60V breakdown voltage and 4.5A current rating against circuit demands. Consider the SOIC-8 package dimensions for PCB layout constraints and verify thermal management requirements based on the specified junction-to-ambient resistance values.

Part Context

The AO4828 belongs to the AOS Dual N-Channel MOSFET family designed for general-purpose power switching. It shares architectural similarities with other trench-based devices in the portfolio but offers specific performance metrics optimized for efficiency. The dual configuration integrates two independent channels within a single compact package to reduce board footprint.

Replacement Considerations

Direct replacements must match the 60V/4.5A dual N-channel specification and SOIC-8 package. Verify equivalent RDS(ON) and gate charge values to maintain switching performance. Cross-reference pinouts carefully as minor variations exist between manufacturers.

FAQ

What is the maximum continuous drain current for the AO4828?

The maximum continuous drain current is 4.5A when measured at a gate-source voltage of 10V.

Is the AO4828 rated for repetitive avalanche energy?

Yes, the device is 100% UIS tested and supports a repetitive avalanche energy of 18 mJ with an inductance of 0.1mH.

What is the typical total gate charge at 10V?

The typical total gate charge (Qg) at VGS=10V is 10.5 nC, with a maximum of 10.5 nC listed in the electrical characteristics table.