AO4838

$0.98

Description：MOSFET 2N-CH 30V 11A 8SOIC
Series：-

SKU:7c46a543c467 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 11A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：11A
Rds On (Max) @ Id, Vgs：9.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1300pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4838

Overview

The AO4838 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and high current capability within an SOIC-8 package. The device supports a drain-source voltage of 30V and a continuous drain current of 11A at VGS=10V. On-resistance is specified as less than 9.6mΩ at VGS=10V and less than 13mΩ at VGS=4.5V. Total gate charge is 22nC maximum at VGS=10V, with turn-on rise and fall times of 3ns each. The component operates across a junction temperature range of -55°C to 150°C.

Feature Summary

Dual configuration integrating two independent N-channel MOSFETs in a single surface-mount package
Advanced trench MOSFET technology designed for extremely low on-resistance performance
Validated reliability through 100% testing for unclamped inductive switching (UIS) and gate resistance

Applications

Load switch circuits
Battery protection systems

Procurement Notes

Verify the specific manufacturer datasheet revision and ordering suffixes directly from official Alpha & Omega Semiconductor documentation before procurement. Confirm that the received components match the exact part number designation and packaging specifications required for the intended circuit design to ensure electrical compatibility.

Selection Notes

Select this component when a compact dual N-channel solution is required for 30V applications. The low on-resistance values at both 10V and 4.5V gate drive voltages make it suitable for logic-level control interfaces. Ensure the thermal management strategy accounts for the junction-to-ambient resistance characteristics provided in the datasheet.

Part Context

This component belongs to the Alpha & Omega Semiconductor lineup of dual MOSFET arrays. It is housed in an SOIC-8 package, providing a compact footprint for board space-constrained designs. The device integrates two identical N-channel transistors, allowing for parallel operation or independent switching functions within a single physical unit.