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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：650pF @ 20V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4840 is a dual N-channel enhancement mode MOSFET utilizing advanced trench technology. It features a drain-source voltage of 40V and a continuous drain current of 6A at VGS=10V. The on-state resistance is less than 30mΩ at VGS=10V and less than 38mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge of 10.8nC at VGS=10V, input capacitance of 650pF, and turn-on delay time of 6.4ns. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Feature Summary
- Dual N-channel configuration with advanced trench technology for low on-resistance and gate charge
- Capable of handling repetitive avalanche energy and fully tested for UIS performance
- Suitable for load switching and PWM applications due to fast switching characteristics
Applications
- Load switching circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific datasheet revision and manufacturing date code upon ordering. Confirm that the component meets RoHS and Sony 259 specifications if required by the design. Ensure thermal management aligns with the specified junction-to-ambient resistance values for the intended PCB layout.
Selection Notes
Select this component when a dual N-channel MOSFET with 40V rating and low RDS(ON) is required. Consider the SOIC-8 package constraints and thermal dissipation capabilities. Verify gate drive voltage compatibility, as RDS(ON) varies significantly between 4.5V and 10V drive levels.
Part Context
The AO4840 belongs to the AlphaMOS series from Alpha & Omega Semiconductor. It is part of a family of dual N-channel MOSFETs designed for general-purpose switching. The device shares similar pinouts and form factors with other dual MOSFETs in the SOIC-8 package, facilitating board space optimization.
Replacement Considerations
Direct substitutes must match the 40V VDS, 6A ID, and SOIC-8 package. Verify that alternative components meet or exceed the 30mΩ RDS(ON) at VGS=10V and have compatible gate charge and switching speeds.
FAQ
What is the maximum repetitive avalanche energy rating?
The datasheet specifies that the device is 100% UIS tested, but does not provide a single numerical value for EAS/EAR in the summary table; it depends on the pulse width and initial junction temperature.
How does the on-resistance change with gate voltage?
RDS(ON) is less than 30mΩ at VGS=10V and increases to less than 38mΩ at VGS=4.5V, indicating improved performance at higher gate drive voltages.
What is the body diode reverse recovery time?
The typical body diode reverse recovery time (trr) is 18ns, with a maximum of 24ns under test conditions of IF=6A and dI/dt=100A/ms.
