AO4852

Overview

The AO4852 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It features a 60V drain-source voltage rating and a continuous drain current of 3A at 25°C. The device utilizes logic level gate technology, ensuring low threshold voltage characteristics with a maximum Vgs(th) of 2.6V at 250µA. Key electrical parameters include a maximum on-resistance of 90mΩ at 10V gate drive and a typical gate charge of 9.2nC. Packaged in an 8-SOIC surface-mount housing, it supports a junction temperature range from -55°C to 150°C and offers a power dissipation capability of 1.4W.

Feature Summary

• Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs within a single compact package for space-efficient circuit designs.
• Logic Level Gate Drive: Optimized threshold voltage allows direct interfacing with standard logic outputs without requiring additional level-shifting drivers.
• Low On-Resistance: Provides efficient conduction with minimized power loss during switching operations under specified gate drive conditions.

Applications

• Load Switching Applications
• DC-DC Converter Circuits
• PWM Motor Control Systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process to ensure supply chain reliability.

Selection Notes

Select this component when a dual N-channel configuration is required within an 8-SOIC footprint. Ensure the application voltage remains below the 60V limit and that the thermal design accommodates the 1.4W power dissipation rating. Verify that the logic interface can provide sufficient gate voltage to achieve the specified low on-resistance performance.

Part Context

The AO4852 belongs to the broader AO48xx series of dual MOSFET arrays produced by Alpha & Omega Semiconductor. This series is designed for general-purpose switching applications where board space is constrained. It shares architectural similarities with other devices in the family but differs in specific voltage and current ratings defined by its unique part number designation.

Replacement Considerations

Direct substitutes must match the 60V/3A dual N-channel specification and 8-SOIC package. Verify equivalent Rds(on) and gate charge values to maintain switching performance. Cross-reference with manufacturers such as Diodes Incorporated or ON Semiconductor for comparable dual MOSFET solutions if availability is restricted.