AO4854

$0.16

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-

SKU:c8cf98380b9a Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：888pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4854

Overview

The AO4854 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. in an 8-SOIC package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 8A at VGS=10V. The on-state resistance (RDS(ON)) is less than 19mΩ at VGS=10V, 23mΩ at VGS=4.5V, and 26mΩ at VGS=4V. Key dynamic parameters include a total gate charge (Qg) of 18nC at 10V and input capacitance (Ciss) of 888pF. The device supports a pulsed drain current of 48A and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench technology provides low on-resistance and reduced gate charge for efficient switching.
Dual configuration enables compact synchronous rectifier and switch combinations in DC-DC converters.
Includes ESD protection and undergoes 100% testing for UIS and gate resistance.

Applications

DC-DC converters
Synchronous rectification circuits

Procurement Notes

Verify the specific manufacturer source document against the requested part number before integration. Confirm that the electrical characteristics match the design requirements, particularly regarding thermal management and maximum ratings. Ensure compliance with export control regulations and applicable legal requirements during acquisition.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with a 30V rating and high current handling up to 8A. Consider the SOIC-8 package constraints and the thermal resistance values when designing the PCB layout. Verify that the gate drive voltage meets the thresholds for optimal RDS(ON) performance.

Part Context

The AO4854 belongs to the AO48xx series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. These devices utilize advanced trench technology to achieve superior on-resistance and switching speed compared to standard planar technologies. The series is designed for power management applications where space efficiency and thermal performance are critical.

Replacement Considerations

Direct replacements must match the 30V VDS, 8A ID, and SOIC-8 package specifications. Verify pinout compatibility and ensure that the substitute device meets or exceeds the RDS(ON) and Qg requirements for the intended application.

FAQ

What is the maximum pulsed drain current for the AO4854?

The maximum pulsed drain current (IDM) is 48A, limited by the junction temperature.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (VGS(th)) typically decreases as the junction temperature increases, ranging from a minimum of 1.2V to a maximum of 2.4V at 25°C.