AO4932

AO4932

  • Description:MOSFET 2N-CH 30V 11A/8A 8SOIC
  • Series:SRFET™

SKU:cb26b8f532f4 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 11A/8A 8SOIC
  • Series:SRFET™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:11A, 8A
  • Rds On (Max) @ Id, Vgs:12.5mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4932

Overview

The AO4932 is an asymmetric dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductors. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device integrates two MOSFETs with a monolithic Schottky diode in parallel with the synchronous MOSFET to enhance efficiency. Key electrical parameters include a drain-source voltage (VDS) of 30V for both FET1 and FET2, and a continuous drain current (ID) of 9A at VGS = 10V. The on-resistance (RDS(ON)) is less than 15.8mΩ at VGS = 10V and less than 19.6mΩ at VGS = 4.5V for FET1. FET2 exhibits RDS(ON) values below 15.8mΩ at VGS = 10V and below 23mΩ at VGS = 4.5V.

Feature Summary

  • Asymmetric dual N-channel configuration optimized for DC-DC converter switching and synchronous rectification.
  • Monolithically integrated Schottky diode connected in parallel with the synchronous MOSFET to improve conversion efficiency.
  • Advanced trench technology implementation ensuring low gate charge characteristics alongside excellent on-resistance performance.

Applications

  • Synchronous rectification in DC-DC converters
  • Compact power switch combinations for power management circuits

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status as the standard product meets specifications. Ensure package integrity upon receipt. Cross-reference ordering part numbers with current datasheets to avoid obsolete stock. Validate thermal handling capabilities against specific application requirements before integration.

Selection Notes

Select this component for applications requiring a compact solution combining switching and rectification functions. The asymmetric design allows for optimized performance between the high-side and low-side switches. Consider the 30V voltage rating and 9A current capacity when designing power stages. Verify that the low gate charge aligns with the driving circuit's speed requirements to minimize switching losses.

Part Context

The AO4932 belongs to the family of asymmetric dual N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductors. This series leverages trench MOSFET technology to provide efficient power solutions. Similar products in the lineup include the AO4912 and AO4918, which share comparable structural designs but may differ in specific electrical ratings or package configurations.

Replacement Considerations

Potential substitutes include the AO4912 and AO4918 from the same manufacturer. These parts share the asymmetric dual N-channel architecture. Verify pin compatibility and ensure that the replacement's voltage and current ratings meet or exceed the original design specifications before substitution.

AO4932AO4932

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