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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8SOIC
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：16mOhm @ 8.6A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1885pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4946 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced SRFET trench technology and includes a monolithically integrated Schottky diode. The device operates with a drain-source voltage of 30 V and supports a continuous drain current of 8.6 A at 25°C. The on-resistance is less than 16 mΩ at VGS = 10V and less than 20 mΩ at VGS = 4.5V. It features low gate charge, high switching speed, and 100% UIS testing. The component is housed in an SOIC-8 package and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced SRFET trench technology for low on-resistance and efficient switching
- Monolithically integrated Schottky diode for improved body-diode performance
- 100% tested for Unclamped Inductive Switching (UIS) capability
Applications
- Low and high side switching in switch-mode power supplies (SMPS)
- General purpose power switching applications
Procurement Notes
Verify the specific datasheet revision and manufacturing lot details before integration. Confirm that the application environment remains within the specified thermal limits and voltage ratings. Ensure compliance with consumer market qualification standards as critical life support uses are not authorized. Cross-reference pinout configurations against the target PCB footprint design.
Selection Notes
Select this component for designs requiring a dual N-channel configuration with integrated Schottky protection. Evaluate the thermal resistance characteristics relative to the expected board copper area and airflow conditions. Consider the gate charge requirements for driving circuits operating at various frequencies and voltage levels.
Part Context
This part belongs to the Alpha & Omega Semiconductor dual MOSFET portfolio. It is designed for compact surface-mount implementations where space efficiency and switching performance are prioritized. The SOIC-8 package allows for standard automated assembly processes while maintaining robust electrical characteristics for power management tasks.
Replacement Considerations
Verify pin compatibility and electrical parameters when substituting. Check if alternative dual N-channel MOSFETs offer comparable RDS(ON) values and integrated diode specifications. Ensure the replacement package matches the existing footprint and thermal dissipation requirements.
