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The AO5401EL is a P-Channel Enhancement Mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 500 mA at 25°C ambient temperature. The device operates with a gate drive voltage of 1.8 V or 4.5 V, exhibiting a maximum on-resistance (Rds(on)) of 800 mΩ at 500 mA and 4.5 V. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 900 mV @ 250 µA, a maximum gate-source voltage (Vgs) of ±8 V, and an input capacitance (Ciss) of 100 pF @ 10 V. Power dissipation is rated at 280 mW (Ta), with a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix 'E' corresponds to the tape and reel packaging configuration required for your manufacturing line. Confirm that the component meets RoHS3 compliance standards if environmental regulations apply to your final product assembly. Ensure the SC-89-3 package dimensions align with your PCB footprint specifications before finalizing procurement orders.
Select this component when a compact P-Channel MOSFET is required for low-voltage DC load switching. The 20 V rating suits single-cell battery systems. Verify that the 500 mA current capacity meets the peak load requirements. Consider the thermal constraints of the SC-89-3 package for high-duty cycle operations.
This part belongs to the Alpha & Omega Semiconductor discrete semiconductor portfolio, specifically within the single FET/MOSFET category. It is an evolution of the AO5401 series, offering enhanced reliability through advanced trench technology. The manufacturer specializes in power management solutions for portable electronics and industrial applications.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers for supply chain diversification.