AO5800E

Overview

The AO5800E is a Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a 12V maximum gate-source voltage rating. The device features an integrated ESD protection structure. Standard product variants are lead-free and comply with RoHS3 specifications.

Feature Summary

• Common-drain configuration facilitates uni-directional or bi-directional load switch applications
• Advanced trench technology provides excellent on-resistance characteristics
• Integrated electrostatic discharge (ESD) protection

Applications

• Uni-directional load switching
• Bi-directional load switching

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm electrical equivalence and compliance status. Confirm current production lifecycle status, such as active or end-of-life designation, through authorized distribution channels prior to procurement planning.

Selection Notes

Select this component for circuits requiring dual N-channel enhancement mode transistors in a common-drain topology. Ensure the design accommodates the specified 12V maximum gate-source voltage limit and leverages the low gate charge capabilities for efficient switching performance.

Part Context

This part belongs to the AON5800 family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It shares core electrical characteristics with standard variants like the AON5800, differentiated primarily by packaging or specific manufacturing lot attributes defined in the official datasheet.

Replacement Considerations

The AON5800 is electrically identical to the AO5800E according to manufacturer data. Verify pinout compatibility and package dimensions before substituting.