AO5803E

AO5803E

$0.37
  • Description:MOSFET 2P-CH 20V SC89-6
  • Series:-

SKU:77bbde9d25dc Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V SC89-6
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:800mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:100pF @ 10V
  • Power - Max:400mW
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SC-89-6
  • Grade:-
  • Qualification:-

Download product information

AO5803E

Overview

The AO5803E is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of -20V and a continuous drain current of -400mA. It operates with gate voltages as low as specified for efficient driving. The component is housed in an SC-89-6 surface mount package, suitable for power dissipation up to 400mW. It is designed for applications requiring compact packaging and reliable switching performance.

Feature Summary

  • Dual P-channel configuration within a single compact package
  • Advanced trench technology for optimized electrical characteristics
  • Low gate charge facilitating efficient drive requirements

Applications

  • DC-DC converter circuits
  • Power management modules
  • Battery protection systems

Procurement Notes

Verify the specific datasheet revision and manufacturing status before procurement, as this component may be obsolete or subject to supply constraints. Confirm that the SC-89-6 package dimensions align with your PCB footprint requirements. Ensure that the thermal management strategy accounts for the 400mW power dissipation limit under expected operating conditions. Cross-reference the manufacturer's latest availability notices to avoid sourcing discontinued inventory.

Selection Notes

Select the AO5803E when a dual P-channel solution is required in a minimal footprint. Its low gate charge makes it suitable for high-frequency switching applications where drive efficiency is critical. Consider the -20V rating for low-voltage DC bus applications. Evaluate the thermal resistance of the SC-89-6 package against the expected load current to ensure junction temperature remains within safe operating limits during continuous operation.

Part Context

This component belongs to Alpha & Omega Semiconductor's lineup of trench MOSFETs, which are engineered for cost-effective and space-constrained designs. The AO5803E specifically addresses the need for integrated dual-channel switching in portable electronics and power supplies. Its design focuses on reducing board space while maintaining robust switching capabilities typical of modern trench technology implementations.

Replacement Considerations

Check for direct pin-compatible alternatives from Alpha & Omega or other manufacturers offering similar -20V dual P-channel specifications. Verify that any substitute maintains equivalent Rds(on) and gate charge characteristics to ensure circuit performance parity. Review thermal and electrical ratings to confirm compatibility with existing system constraints.

AO5803EAO5803E
$0.37
Buy Now