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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 2.3A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.34nC @ 4.5V, 4.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：390pF @ 15V, 409pF @ 15V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6601L is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It integrates an N-channel and a P-channel MOSFET in a single package, utilizing advanced trench technology to achieve low on-resistance and gate charge. The N-channel device supports a drain-source voltage of 30V with a continuous current of 3.4A at VGS=10V, while the P-channel counterpart offers -30V and -2.3A under similar conditions. Key electrical parameters include RDS(on) below 60mΩ for the N-channel and 135mΩ for the P-channel at 10V drive. The component is RoHS compliant and Pb-free.
Feature Summary
- Complementary N-Channel and P-Channel Configuration
- Advanced Trench Technology for Low On-Resistance
- Low Gate Charge Characteristics
Applications
- High-speed power inverters
- Motor control circuits
- Power management systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm compliance with environmental standards such as RoHS and Sony 259 specifications. Ensure that the procurement channel provides authentic components from Alpha & Omega Semiconductor Inc. to guarantee performance consistency and reliability in final assembly.
Selection Notes
Select this component when a compact solution for high-speed switching is required. The complementary nature simplifies circuit design for half-bridge or full-bridge applications. Verify that the drive voltage levels align with the specified thresholds for optimal RDS(on) performance and switching efficiency.
Part Context
The AO6601L belongs to the standard product line of Alpha & Omega Semiconductor Inc., designed for general-purpose power switching applications. It is electrically identical to the AO6601, with the 'L' suffix indicating a green product option that meets specific environmental criteria. This part is part of a broader family of complementary MOSFETs offering various voltage and current ratings.
Replacement Considerations
The AO6601 is electrically identical to the AO6601L and serves as a direct functional substitute. Other complementary MOSFET pairs with matching 30V ratings and similar current capabilities may be considered if pin compatibility and thermal characteristics are verified.
FAQ
Is there a functional difference between the AO6601 and AO6601L?
No, the AO6601 and AO6601L are electrically identical. The 'L' suffix denotes a green product ordering option that complies with specific environmental regulations.
What is the maximum drain-source voltage for both channels?
Both the N-channel and P-channel devices have a maximum drain-source voltage (VDS) rating of 30V and -30V, respectively.
How does the gate drive voltage affect the on-resistance?
The on-resistance (RDS(on)) varies with gate-source voltage. For example, the N-channel RDS(on) is less than 60mΩ at 10V, but increases to less than 115mΩ at 2.5V.
