AO6602G

$0.15

Description：MOSFET N/P-CH 30V 3.5A 6TSOP
Series：-

SKU:9327390b065a Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 3.5A 6TSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.05nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：210pF @ 15V
Power - Max：1.15W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：6-TSOP
Grade：-
Qualification：-

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AO6602G

Overview

The AO6602G is a complementary MOSFET pair from Alpha & Omega Semiconductor, integrating an N-channel and P-channel device in a single TSOP-6 package. The N-channel unit supports a drain-source voltage of 30V with a maximum continuous drain current of 3.5A at VGS=10V, featuring a typical on-resistance below 50mΩ. The P-channel counterpart provides -30V breakdown and -2.7A current capability at VGS=-10V, with a typical on-resistance under 100mΩ. Both transistors utilize Trench Power MOSFET technology to achieve low gate charge and fast switching speeds, making them suitable for high-efficiency power inversion applications.

Feature Summary

Integrates complementary N-channel and P-channel MOSFETs into a compact TSOP-6 surface-mount package.
Utilizes advanced Trench Power MOSFET technology to minimize on-resistance and reduce gate charge requirements.
Designed for high-speed switching performance with optimized dynamic parameters for efficient power conversion.

Applications

DC fan control circuits
Motor driver interfaces
High-speed power inverters

Procurement Notes

Verify the component against the official Alpha & Omega Semiconductor datasheet revision 1.0 dated August 2017. Confirm that the received units match the AO6602G part number and TSOP-6 package marking. Ensure compliance with RoHS and Halogen-Free standards as specified by the manufacturer before integration into the final assembly.

Selection Notes

Select this component when a matched complementary pair is required for space-constrained designs. The N-channel device offers higher current capacity (3.5A) compared to the P-channel (-2.7A), which may influence circuit symmetry. Verify that the application's thermal environment allows for adequate heat dissipation within the specified junction temperature range of -55°C to 150°C.

Part Context

This component belongs to the AO6602 series of complementary MOSFETs manufactured by Alpha & Omega Semiconductor. It is designed as a general-purpose solution for replacing discrete N and P-channel pairs in applications requiring synchronized switching characteristics and reduced board footprint.

Replacement Considerations

Direct substitutes include the AO6602L, which is electrically identical but offered as a green product option. Other compatible parts from different manufacturers must be evaluated based on matching voltage ratings, current capabilities, and package dimensions.

FAQ

What is the maximum continuous drain current for the N-channel device?

The N-channel device supports a maximum continuous drain current of 3.5A when the gate-source voltage is 10V.

Does the AO6602G support unclamped inductive switching?

Yes, the datasheet includes test circuits and waveforms for Unclamped Inductive Switching (UIS), indicating the device is characterized for this mode of operation.