AO6604

FET, MOSFET Arrays Overview

The AO6604 is a complementary enhancement mode MOSFET array featuring an N-channel and P-channel pair in a single TSOP-6 package. The N-channel device provides a drain-source voltage of 20V, continuous current of 3.4A at VGS=4.5V, and on-resistance below 65mΩ. The P-channel counterpart offers -20V breakdown, -2.5A continuous current at VGS=-4.5V, and on-resistance under 75mΩ. Both transistors utilize advanced trench technology for low gate charge and fast switching characteristics.

FET, MOSFET Arrays Feature Summary

• Complementary N-channel and P-channel MOSFETs integrated into a single compact surface-mount package
• Advanced trench technology designed to minimize on-resistance and gate charge for efficient power management
• Logic-level gate drive capability supporting operation with standard low-voltage control signals

FET, MOSFET Arrays Applications

• Load switch circuits requiring dual-polarity control
• Battery protection modules utilizing complementary switching logic
• Low-voltage DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with environmental standards such as RoHS or lead-free requirements. Ensure the selected variant matches the required thermal and electrical specifications for the intended operating environment before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints necessitate a dual-transistor solution within a six-terminal footprint. Evaluate the total gate charge and threshold voltage requirements to ensure compatibility with the driving logic levels. Confirm that the thermal resistance characteristics align with the board layout and ambient temperature conditions of the target application.

FET, MOSFET Arrays Part Context

This device belongs to Alpha & Omega Semiconductor's portfolio of complementary MOSFET arrays. It is engineered to replace discrete N-channel and P-channel components in designs where board real estate is limited. The integration simplifies assembly processes while maintaining high performance in low-voltage power switching applications.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the TSOP-6 package outline and provide equivalent 20V ratings with comparable on-resistance values. Verify pinout compatibility to prevent circuit damage during substitution.