AO6604_001

Overview

The AO6604 is a complementary enhancement mode MOSFET from Alpha & Omega Semiconductor, integrating an N-channel and P-channel device in a single TSOP-6 package. The N-channel unit provides a drain-source voltage (VDS) of 20V and continuous drain current (ID) of 3.4A at VGS=4.5V, with RDS(ON) below 65mΩ. The P-channel unit offers -20V VDS and -2.5A ID at VGS=-4.5V, with RDS(ON) under 75mΩ. Both transistors feature low gate charge and fast switching characteristics, supporting operation across a junction temperature range of -55°C to 150°C.

Feature Summary

• Combines N-channel and P-channel trench MOSFETs in a compact surface-mount package for space-constrained designs.
• Optimized for low on-resistance to minimize conduction losses in load switch and battery protection circuits.
• Features fast switching speeds and low gate charge for efficient power management applications.

Applications

• Load switches
• Battery protection circuits
• Power management modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead time requirements directly with authorized distributors or the manufacturer before placing orders. Ensure the component matches the intended thermal and electrical requirements for the target application.

Selection Notes

Select this component when a complementary pair of low-voltage, high-current MOSFETs is required in a minimal footprint. Evaluate the thermal resistance (RθJA) based on the specific PCB copper area and airflow conditions, as the rated power dissipation depends heavily on board design. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.

Part Context

This part belongs to the family of complementary MOSFETs designed by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance within a small outline package. The device is engineered specifically for portable electronics and power management systems where size and efficiency are critical constraints.

Replacement Considerations

Potential substitutes include other 20V complementary MOSFETs in TSOP-6 packages, such as the FDMA1032CZ or PJS6601. Verify pinout compatibility, RDS(ON) values, and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent switching speeds and gate charge parameters match the original design requirements.

FAQ

What is the maximum continuous drain current for the N-channel MOSFET?

The maximum continuous drain current for the N-channel MOSFET is 3.4A when measured at a gate-source voltage of 4.5V.

Does the AO6604 support unclamped inductive switching (UIS)?

Yes, the datasheet includes test circuits and waveforms for Unclamped Inductive Switching (UIS), indicating the device is characterized for this condition.

What is the typical gate threshold voltage for the P-channel device?

The typical gate threshold voltage (VGS(th)) for the P-channel MOSFET is -0.65V, with a range from -0.4V to -1V.