AO6604L_001

FET, MOSFET Arrays Overview

The AO6604L_001 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It integrates an N-channel and a P-channel MOSFET within a single TSOP-6 package. The N-channel device supports a drain-source voltage of 20V with a continuous drain current of 3.4A at VGS=4.5V, while the P-channel device handles -20V and -2.5A at VGS=-4.5V. Both channels utilize advanced trench technology to achieve low on-resistance values below 65mΩ and 75mΩ respectively at 4.5V gate drive. The component operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrates N-channel and P-channel enhancement mode transistors into a compact TSOP-6 surface mount package for space-constrained designs.
• Utilizes advanced trench MOSFET technology to minimize static drain-source on-resistance across various gate voltage levels.
• Features low total gate charge characteristics to facilitate efficient switching performance in load switch applications.

FET, MOSFET Arrays Applications

• Load switches
• Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configuration and marking details. Ensure the selected variant matches the required thermal and electrical specifications for the intended circuit environment before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a matched complementary pair is required for synchronous switching or high-side/low-side control within limited board area. Evaluate the specific gate drive voltage requirements against the provided on-resistance curves to ensure adequate current handling capabilities are met under operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the Alpha & Omega Semiconductor complementary MOSFET family designed for low-voltage power management. It serves as a monolithic solution replacing discrete dual-transistor setups, simplifying PCB layout and reducing parasitic inductance in power switching paths.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible alternatives include the FDMA1032CZ from ON Semiconductor and the SSF2145CH6 from GOOD-ARK Electronics. Verify that substitute devices meet the same voltage ratings and on-resistance thresholds for equivalent performance.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature rating for the AO6604?

The maximum junction temperature (TJ) and storage temperature range for the AO6604 is specified as -55°C to +150°C.

How does the on-resistance change with junction temperature?

The on-resistance increases as the junction temperature rises. Typical characteristics show normalized on-resistance increasing significantly from 25°C to 125°C for both N-channel and P-channel devices.

What is the body diode reverse recovery time for the N-channel device?

The typical body diode reverse recovery time (trr) for the N-channel device is 14 ns, with a maximum of 19 ns under test conditions of IF=3.4A and dI/dt=100A/ms.