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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/20V 3.4A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V, 20V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 3.3A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.4A, 10V, 75mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA, 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V, 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：235pF @ 15V, 510pF @ 10V
- Power - Max：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6608 is a complementary enhancement-mode MOSFET from Alpha & Omega Semiconductor, integrating an N-channel and P-channel device in a single TSOP-6 package. The N-channel unit features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 3.4A at 25°C, with a maximum on-resistance (RDS(ON)) of 60mΩ at VGS=10V. The P-channel unit offers a BVDSS of -20V and an ID of -3.3A at VGS=-4.5V, with a maximum RDS(ON) of 75mΩ. Both channels operate within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrates N-channel and P-channel enhancement-mode MOSFETs into a single compact surface-mount package for space-constrained designs.
- Utilizes advanced trench technology to achieve extremely low on-resistance across various gate drive voltages.
- Designed specifically for load switching and battery protection applications requiring efficient power management.
Applications
- Load switch circuits
- Battery protection modules
- Portable equipment power management
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with RoHS and halogen-free requirements. Confirm that the component meets the intended thermal and electrical specifications for the target application environment before finalizing procurement decisions.
Selection Notes
Select this component when a complementary pair is required in a minimal footprint. Ensure the driving circuitry can provide sufficient gate voltage to meet the desired RDS(ON) thresholds, particularly for the P-channel unit which requires negative gate drive relative to the source.
Part Context
This device belongs to the complementary MOSFET family offered by Alpha & Omega Semiconductor. It is designed to replace discrete N-channel and P-channel pairs, simplifying PCB layout and reducing assembly complexity in low-voltage power switching applications.
Replacement Considerations
Direct pin-compatible replacements may include other complementary MOSFETs in TSOP-6 packages from manufacturers such as Fairchild or Panjit, provided their electrical parameters match or exceed the AO6608 specifications.
FAQ
What is the maximum gate-source voltage rating for the AO6608?
The absolute maximum gate-source voltage is ±12V for the N-channel and ±8V for the P-channel.
How does the on-resistance of the P-channel MOSFET vary with gate voltage?
The P-channel RDS(ON) decreases as the magnitude of the gate-source voltage increases, with maximum values specified at VGS=-4.5V, -2.5V, and -1.8V.
Is the AO6608 suitable for high-frequency switching applications?
Yes, it features fast switching times, including turn-on rise times of 2.5ns for the N-channel and 11ns for the P-channel, making it suitable for moderate-frequency switching.
